Product management system

ABSTRACT

One feature of the present invention is a product management system that includes a package body for packing a product attached with an ID tag, and a reader/writer. The ID tag includes a thin film integrated circuit portion and an antenna, the package body includes a resonance circuit portion having an antenna coil and a capacitor, and the resonance circuit portion can communicate with the reader/writer and the ID tag. Accordingly, the stability of communication between an ID tag attached to a product and an R/W can be secured, and management of products can be conducted simply and efficiently, even if a product is packed by a package body.

TECHNICAL FIELD

The present invention relates to a product management system that readsand writes information about a product attached with an ID tag includinga memory, a CPU and the like by a reader/writer.

BACKGROUND ART

Recently, in all kinds of industrial worlds such as food industry andmanufacturing industry, demands for strengthening safety and managementsystems of products have been heightened, and therewith, the amount ofinformation on the products are increasing. However, the currentinformation on a product is just information such as a country ofmanufacture, a manufacturer, or an item number, mainly provided by tenand several figures of a barcode, and the amount of information is quitesmall. Further, in the case of using a barcode, scanning the barcodes byhand one by one requires long time. Consequently, instead of the barcodesystem, an automatic recognition technique by a non-contact IC tagutilizing an electromagnetic wave, which is called RFID (Radio FrequencyIdentification), has been attracting attention.

In addition, in order to ensure safety (for example, a place of origin,absence or presence of infectious disease, and the like) of animals andplants, a system is becoming common, in which IC chips are directlyimplanted into bodies of the animals and plants to obtain and manageinformation on the animals and plants by an information reading device(reader) outside the bodies (Reference 1: Nikkei Electronics (NikkeiBusiness Publications, Inc.) published on Nov. 18, 2002, pp. 67-76).

DISCLOSURE OF INVENTION

However, a product provided (attached) with an ID tag is usually placedin a package body such as a corrugated fiberboard or a container andtransferred. At this time, when a product exists in a package body,there is a risk that communication with an ID tag using a reader/writer(also referred to as R/W) is blocked. In addition, when packing bodiescontaining products are stacked in a storehouse or the like,communication with an ID tag attached to each product may be blocked.Specifically, if communication range of an R/W is short, more internalproducts or products packed by a more internal package body is difficultto receive an electromagnetic wave emitted from the R/W.

Then, it is difficult to manage products in a distribution process ofproducts, which leads to lose convenience of ID tags.

The present invention has been made in view of the above describedproblems. It is an object of the present invention to provide a productmanagement system that can secure the stability of communication betweenan ID tag attached to a product and an R/W, and can conduct managementof products simply and efficiently, even if a product is packed by apackage body.

To solve the above described problems, according to the presentinvention, a product management system comprising a package body forpacking a product attached with an ID tag, and a reader/writer forreading and writing information stored in the ID tag, wherein the ID tagincludes a thin film integrated circuit portion including a thin filmtransistor, and an antenna; the packing body includes a resonancecircuit portion including an antenna coil and a capacitor; and theresonance circuit portion can communicate with the reader/writer and theID tag.

In other words, according to the present invention, a resonant circuitportion is provided to a package body for packing a product, and byusing a resonance between the resonant circuit portion and an R/W forreading and writing information stored in the ID tag, communicationbetween an ID tag and the R/W is conducted certainly and smoothly. Theresonant circuit portion includes at least an inductance L and acapacitance C that are served by an antenna coil and a capacitor,respectively.

A product management system according to the present invention has astructure described above. Thus, information stored in an ID tag can besurely read and erased, and information can be surely written,overwritten and so on in the ID tag, by conductingreception/transmission of a signal between an R/W and the ID tag througha resonant circuit portion. Specifically, communication disabled orcommunication instability due to directivity (a property of going inonly a certain direction or a property of receiving from only a certaindirection) between an R/W and an ID tag attached to a product can besolved and communication between them can be conducted surely.Therefore, the present invention is effective when reading or writinginformation in an ID tag 2 attached to a product 1 once in a short time.

An ID tag used in the present invention includes at least a thin filmintegrated circuit portion including a thin film transistor, and anantenna, and thus can be manufactured at a lower cost than an ID tagformed by a conventional method by which a plurality of integratedcircuits are formed over a silicon wafer and the silicon wafer is groundand removed to isolate the thin film integrated circuits. In otherwords, the thin film integrated circuits can be separated from asubstrate on which the plurality of thin film integrated circuits areformed to isolate elements. ID tags can be manufactured at a lower costsince a glass substrate or the like that is less expensive than asilicon wafer can be used as a separation substrate (a substrate fromwhich element are separated) which the separation substrate can also beused multiple times.

Further, in forming a resonant circuit portion, a plurality of thin filmintegrated circuit portions mainly having a thin film structure isformed over a substrate, and the resonant circuit portion is formed bythe separation method, thereby manufacturing the resonant circuitportion at a low cost.

Note that a chemical separation method using a gas or a liquid of halidesuch as ClF₃, and a physical separation method by which a substrateprovided with a plurality of thin film integrated circuit portions isstressed to separate the substrate are cited as the separation method.Any of them may be employed. However, element-separation can beconducted more surely by the chemical separation method than thephysical separation method.

As described above, communication between an R/W and an ID tag can beconducted more securely through a resonant circuit portion using an IDtag manufactured at low cost. Therefore, product management system withhigher performance can be provided.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIG. 1 is a schematic diagram of a product management system accordingto one aspect of the present invention;

FIG. 2 is a block diagram showing an example of a circuit configurationof a product management system according to one aspect of the presentinvention;

FIG. 3 shows a baggage management system in an airport or the like, towhich the present invention is applied;

FIG. 4 shows a transportation vehicle provided with a resonant circuitportion;

FIGS. 5A to 5C each show various communication methods;

FIG. 6 is a block diagram showing an example of a circuit configurationof an ID tag;

FIGS. 7A to 7E each show manufacturing steps of an ID tag according toone aspect of the present invention;

FIGS. 8F to 8I each show manufacturing steps of an ID tag according toone aspect of the present invention;

FIGS. 9J to 9L each show manufacturing steps of an ID tag according toone aspect of the present invention;

FIGS. 10M to 10O each show manufacturing steps of an ID tag according toone aspect of the present invention;

FIGS. 11A and 11B each show manufacturing steps of an ID tag accordingto one aspect of the present invention;

FIG. 12 is a schematic view of a low pressure CVD apparatus used forforming an ID tag according to one aspect of the present invention; and

FIGS. 13A to 13C each show manufacturing steps (a transferring method toan inlet substrate) of an ID tag according to one aspect of the presentinvention.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment Modes according to the present invention will hereinafter bedescribed with reference to the accompanying drawings. The presentinvention can be carried out in many different modes, and it is easilyunderstood by those skilled in the art that modes and details hereindisclosed can be modified in various ways without departing from thespirit and the scope of the present invention. It should be noted thatthe present invention should not be interpreted as being limited to thedescription of the embodiment modes to be given below.

Embodiment Mode 1

A structure of a product management system according to the presentinvention is described with reference to FIG. 1.

In FIG. 1, a plurality of packing bodies 3 in which products 1 arepacked are stacked. An ID tag 2 storing various information about theproduct 1 is attached to the product 1. A resonant circuit portion 4 isformed in the package body 3. The products 1 may be of the same types ordifferent types.

Herein, an ID tag (Identification tag) attached to a product has mainlya function of identifying products distributed in a market or a functionof storing information on the products, and is referred to as an IDchip, an ID label, an ID seal, an ID sticker and the like depending on amode thereof. ID tags include a card-like ID tag

An ID tag in the present invention includes a thin film integratedcircuit portion. The thin film integrated circuit portion isconceptually different from a conventional IC (Integrated Circuit) whichis formed on a silicon wafer. The thin film integrated circuit portiondenotes an integrated circuit portion that at least includes a thin filmactive element typified by a TFT (thin film transistor), a wiring forconnecting the thin film active elements, a wiring for connecting thethin film active elements with an external mechanism (such as an antennaof a non-contact ID tag) and the like. Of course, constituent elementsof the thin film integrated circuit portion are not limited thereto, andthe thin film integrated circuit portion may include at least one thinfilm active element typified by a TFT.

Note that a thin film integrated circuit portion constituting a part ofan ID tag according to the present invention is thinner than that in aconventional IC chip. Thus, the thin film integrated circuit portion isalso called an IDT chip (Identification Thin Chip) or the like. Inaddition, the thin film integrated circuit portion to be used in thepresent invention uses an insulating substrate such as a glass substrateor a quartz substrate in principle without using a silicon wafer and canbe transferred to a flexible substrate, as described later. Therefore,the thin film integrated circuit portion is also referred to as an IDGchip (Identification Glass Chip), an IDF chip (Identification FlexibleChip), a soft chip, or the like. A chip with an antenna mounted is alsocalled as a radio frequency chip.

The ID tag 2 is attached to the outer surface of the product 1 to beconfirmed visibly in FIG. 1. However, the ID tag 2 may be provided inthe inside of the product 1. Note that a product herein includes acasing thereof as well as the content of the product itself.

A resonant circuit portion 4 includes at least an antenna coil 18serving as an inductance and a capacitor 19 as shown in FIG. 2. Theresonant circuit portion 4 receives an electromagnetic wave from areader/writer (R/W) 5 for reading and writing various information on theproduct 1, which is stored in the ID tag 2, and transmits theelectromagnetic wave to the ID tag 2. Further, the resonant circuitportion 4 receives an electromagnetic wave from the ID tag 2 andtransmits the electromagnetic wave to the R/W 5. As described above, theresonant circuit portion 4 serves as a relay point oftransmission/reception between the R/W 5 and the ID tag 2.

The resonant circuit portion 4 is designed to resonate with almost thesame frequency as that of an electromagnetic wave transmitted from theR/W 5. In other words, the values of inductance L of an antenna coil 18and capacitance C of a capacitor 19 (ref. FIG. 2) which constituteresonant circuit portion 4 are adjusted to resonate with the R/W 5.

Resonance herein means that an object oscillates when added from theoutside with the same frequency as a frequency by which an oscillatoroscillates most easily (natural frequency), even if the frequency is alittle force. This natural frequency is called a resonance frequency andis unique for each oscillator. Resonance frequency f is expressed withf=1/{2 π(LC)^(1/2)}. In other words, the values of inductance L of theantenna coil 18 and capacitance C of the capacitor 19 that constitutethe resonant circuit portion 4 are adjusted and the frequency f isadjusted to be almost the same frequency as that of the R/W 5, therebyresonating the resonant circuit portion 4.

When the R/W 5 is brought closer to the package body 3 containing theproduct 1, an electromagnetic wave is emitted from an antenna portion 6to the package body 3. The resonant circuit portion 4 formed in thepackage body 3 can receive an alternating electromagnetic waveefficiently from the R/W 5, since the resonant circuit portion 4resonates with almost the same frequency as that of the R/W 5. Further,the resonant circuit portion 4 conducts power supply to the ID tag 2 andtransmission/reception of a signal between the ID tag 2 and the resonantcircuit portion 4 (in other words, transmission/reception of a signalbetween the ID tag and the R/W 5) by an electromagnetic coupling method,an electromagnetic induction method, an electrostatic coupling method orthe like.

Thus, information stored in the ID tag 2 can be securely read anderased, and information can be securely written, overwritten and so onin the ID tag, by conducting reception/transmission of a signal betweenthe R/W 5 and the ID tag 2 through the resonant circuit portion 4.Specifically, communication disabled or communication instability due todirectivity (a property of going in only a certain direction or aproperty of receiving from only a certain direction) between the R/W 5and the ID tag 2 attached to the product 1 can be solved andcommunication between them can be conducted surely.

Note that an electromagnetic induction method, an electromagneticcoupling method, a microwave method, an optical communication method, anelectrostatic coupling method and the like can be employed for thecommunication method between the R/W 5 and the resonant circuit portion4 and the communication method between the resonant circuit portion 4and the ID tag 2. The communication methods for the both may beidentical or different.

In general, an electromagnetic induction method, an electromagneticcoupling method, and an electrostatic coupling method are classifiedinto a vicinity type, a close type and a proximity type depending on thecommunication range; however, any of them may be used.

The communication range between the reader/writer and the resonantcircuit portion may be longer than the communication range between theresonant circuit portion and the ID tag. It becomes possible tocommunicate with the ID tag from a distance and conduct remote controlby extending the communication range between the resonant circuitportion and the reader/writer.

Information stored in the ID tag 2, which has been received by theantenna portion 6, is displayed on a display portion 7 provided insidethe R/W 5. For example, information of the product 1, such as a countryof origin, a producer, a production season, an importer, an expirationdate, and a price, are displayed. Operation keys 8 are provided in theR/W 5 and thereby, ON/OFF of the communication with the ID tag 2 andselection, deletion and the like of information that has been readbecome possible. The R/W 5 is connected to a computer 9. The computer 9controls the R/W 5 and processes information read by the R/W 5.

Note that the resonant circuit portion 4 may include a battery, a CPU, amemory and the like for its own. Thus, information can be stored in theresonant circuit portion 4 temporarily. Further, the resonant circuitportion 4 may function as an R/W. Thus, for example, in packing theproduct 1, information accumulated in the resonant circuit portion 4 canbe written in the ID tag 2, and the information accumulated in the IDtag 2 can be read out.

The package body 3 can be reused after the product 1 is taken out fromthe package body 3.

Embodiment Mode 2

A product management system according to the present invention isdescribed more in detail with reference to FIG. 2. FIG. 2 is a blockdiagram showing configurations of an ID tag 2, a resonant circuitportion 4 and an R/W 5.

The R/W 5 includes at least an output interface 12, an input inter ace13, an output antenna 14 and an input antenna 15. Note that the numberof each antenna is not limited to that shown in FIG. 2. Moreover, theshape of antenna is not limited to a coil-like shape.

A signal modulated in the output interface 12 of the R/W 5 is outputfrom the output antenna 14 and sent to the ID tag 2 through the resonantcircuit portion 4 provided in a package body 3.

The resonant circuit portion 4 includes at least a circuit provided withan impedance Z that is inductive and capacitive. The inductive impedanceis an inductance L and the capacitive impedance is a capacitance C. Forexample, as shown in FIG. 2, the resonant circuit portion 4 includes atleast an antenna coil 18 serving as the inductance L and a capacitor 19serving as the capacitance C. The inductance L and the capacitance C maybe serially connected to each other (series resonance), or may beconnected in parallel (parallel resonance).

In the resonant circuit portion 4, for example, in the case where thecoil (inductance L) and the capacitor (capacitance C) are seriallyconnected to each other, impedance becomes zero at a resonance point,(f≈1/{2π(LC)^(1/2)}, since reactance of the coil and the capacitor (animaginary part of the impedance) is offset at the resonance point. Notethat impedance is equal to resistance R of the wiring since resistance R(a real part of impedance) inevitably generates in the actual element.The material of a wiring constituting a part of the resonant circuitportion 4 preferably employs a material having low wiring resistance.

For example, it is desirable to employ low electric specific resistancesuch as Cu (1.55×10⁻⁶ Ω·cm), Al (2.65×10⁻⁶ Ω·cm), Au (2.2×10⁻⁶ Ω·cm), Ag(1.62×10⁻⁶ Ω/cm) and the like. These may be plated or stacked.

On the other hand, the ID tag 2 includes at least an input antenna 20,an output antenna 21, an input interface 22, an output interface 23, andvarious circuits such as a CPU 30, a coprocessor 31, a ROM 32, a RAM 33and a nonvolatile memory 34, and a bus 28 for connecting them. Note thatthe number of each antenna is not limited to that shown in FIG. 2.Moreover, the shape of each antenna is not limited to a coil-like shape.

The input interface 22 is provided at least with a rectification circuit24 and a demodulation circuit 25. An alternating source voltage inputfrom the input antenna 20 is rectified to a direct-current sourcevoltage in the rectification circuit 24 and is supplied to the abovevarious circuits through the bus 28. The alternating current of varioussignals input from the input antenna 20 is demodulated in thedemodulation circuit 25. Various signals whose waveform is shaped bybeing demodulated are supplied to the above various circuits through thebus 28.

The coprocessor 31 serves as a sub-processor that works to aid the CPU30 as a main processor when all processes are controlled in a thin filmintegrated circuit portion 29. Generally, the coprocessor functions asan instruction execution unit exclusively for processing of codes, andcan execute processing of codes, which is necessary for applicationssuch as settlements. As the nonvolatile memory 34, for example, anEPROM, an EEPROM, a UV-EPROM, a flash memory, or an FRAM (registeredtrademark) in which information can be rewritten more than once ispreferably used.

The memory used in the ID tag 2 is divided, based on its function andbehavior, into a program memory (a region in which a program is stored),a working memory (a region in which data is temporarily saved in theprocess of executing a program), and a data memory (a region in whichfixed data treated by a program is stored in addition to informationunique to a product). Generally, a ROM is used as the program memory,and a RAM is used as the working memory. In addition, the RAM alsofunctions as a buffer during communication with the R/W. In order tostore data input as signals in a predetermined address, an EEPROM isgenerally used.

Various signals demodulated in the demodulation circuit 25 are suppliedto the various circuits and then information unique to a product, whichhas been stored in the memory, is replaced by a signal in the variouscircuits. Further, the signal is modulated in the output interface 23and transmitted to the R/W 5 through the resonant circuit portion 4 bythe output antenna 21.

The output interface 23 includes at least a modulation circuit 26 and anamplifier 27. Various signals input into the output interface 23 fromthe various circuits are modulated in the modulation circuit 26 andamplified or buffer-amplified in the amplifier 27 and then transmittedto a terminal device such as the R/W 5 from the output antenna 21. Aninput antenna 15 of the R/W 5 receives a signal transmitted from the IDtag 2. The signal is demodulated in the input interface 13 andtransmitted to a computer 9 through a controller 11, and is subjected todata processing, thereby recognizing the information unique to theproduct.

Further, read information can be accumulated in a database 10 connectedto the computer 9. On the contrary, information accumulated in thedatabase 10 can be written in the ID tag 2 through the R/W 5.

Although the computer 9 has software that has a function of processinginformation on a product, of course, hardware may be used forinformation processing. Consequently, as compared with work of readingbarcodes one-by-one in a conventional way, time and labor forinformation processing and errors are reduced to reduce burden formanagement of products.

The various circuits shown in FIG. 2 are just one mode of configurationsaccording to the present invention. The various circuits mounted on theID tag 2 or R/W 5 are not limited to the above-mentioned circuits. FIG.2 shows an example using antennas for the non-contact type. However, thenon-contact type is not limited to this example. A light-emittingelement, a light sensor, or the like may be used to transmit and receivedata with light.

In FIG. 2, the input interface 22 and the output interface 23, whichinclude analog circuits such as the rectification circuit 24, thedemodulation circuit 25, and the modulation circuit 26; the CPU 30; thevarious memories; and the like are formed as one thin film integratedcircuit portion 29. However, the configuration is just one example, andthe present invention is not limited to this configuration. The genericterm “thin film integrated circuit portion 29” means that a thin filmactive element typified by a TFT is included in each component part;however, all component parts are not necessarily formed by TFTs and atleast one component part may be formed by a TFT or the like. Forexample, the input interface 22 and the output interface 23, whichinclude analog circuits such as the rectification circuit 24, thedemodulation circuit 25, and the modulation circuit 26 can be formed ona silicon wafer as a conventional manner, while the CPU 30, the variousmemories, and the like can be formed with a thin film integrated circuitformed by using TFTs.

As described above, if a thin film integrated circuit part including athin film active element such as a TFT is used for at least one ofcomponent parts of the ID tag 2, back-grinding is not needed, unlike aconventional IC chip formed on a silicon wafer. Advantageous effectsthat process can be simplified drastically and manufacturing cost can bereduced drastically and so on can be obtained. Further, if a physical ora chemical separation method is employed in forming a thin filmintegrated circuit portion, a glass substrate, a quartz substrate, asolar battery grade silicon substrate and the like can be used as aseparation substrate. Further, the separation substrate can be reused toreduce the manufacturing cost drastically.

Note that the input antenna 20 and the output antenna 21 may be formedto be included in the thin film integrated circuit portion 29. Inaddition, one antenna may serve as the both input one and output one,without differentiating the input antenna 20 and the output antenna 21.

FIG. 2 shows an example of supplying a source voltage from the R/W 5that is a terminal device, but the present invention is not limited tothis. For example, a solar battery may be provided in the ID tag 2although not shown. In addition, an ultra thin battery such as a lithiumbattery may be built-in.

Note that the thin film integrated circuit portion 16 of the R/W 5(including at least the output interface 12 and the input interface 13)may use an IC formed on a silicon wafer in a conventional manner.However, a thin film integrated circuit portion made from a thin filmactive element (thin film non-linear element) like a thin filmtransistor (TFT) can be used, similarly to the thin film integratedcircuit portion 29 of the ID tag 2 in the case of forming a small andthin R/W 5.

When a thin film integrated circuit is used as a component part of theR/W 5, the above working-effect can be obtained similarly to the case ofusing the thin film integrated circuit portion 29 in the ID tag 2.

Note that the output antenna 14 and the input antenna 15 may be formedto be included in the thin film integrated circuit portion 16. Inaddition, one antenna may serve as the both input one and output one,without differentiating the input antenna 14 and the output antenna 15.

Embodiment 1

An example of applying the present invention is described with referenceto FIG. 3 in Embodiment 1. Baggage inspection in the airport or the likeis shown in FIG. 3. Here, a suitcase 35 of a tourist or the like servesas a package body. The suitcase 35 includes at least one resonantcircuit portion 4. The resonant circuit portion 4 may be provided for anouter surface of the suitcase 35; however, is preferably formed insideor an interior portion of a cover for preventing separation due toexternal force, theft and the like. Inside the suitcase 35, a product 1and the like are packed. ID tags 2 are attached to each product.

Baggage such as the suitcase 35 containing the product 1 is transferredby a conveyor 37. When the baggage reaches an antenna portion 6 of theR/W 5, the resonant circuit portion 4 provided for the suitcase 35receives an electromagnetic wave from the R/W 5 and transmits theelectromagnetic wave to the ID tag 2. As described above, the resonantcircuit portion 4 serves as a relay point of transmission/receptionbetween the R/W 5 and the ID tag 2.

The resonant circuit portion 4 includes at least an antenna coil 18serving as an inductance and a capacitor 19 as shown in FIG. 2. Theresonant circuit portion 4 is designed to resonate with almost the samefrequency as that of an electromagnetic wave sent from the R/W 5. Inother words, the values of inductance L of the antenna coil 18 andcapacitance C of the capacitor 19 constituting the resonant circuitportion 4 are adjusted to resonate with the R/W 5.

The resonant circuit portion 4 formed in the suitcase 35 can receive analternating electromagnetic wave efficiently from the R/W 5 since theresonant circuit portion resonates with almost the same frequency asthat of the R/W 5. Further, the resonant circuit portion 4 conductspower supply to the ID tag 2 and transmission/reception of a signalbetween the ID tag 2 and the resonant circuit portion 4 (in other words,transmission/reception of a signal between the ID tag 2 and the R/W 5)by an electromagnetic coupling method, an electromagnetic inductionmethod, an electrostatic coupling method or the like.

Thus, information stored in the ID tag 2 can be surely read and erased,and information can be surely written, overwritten and so on in the IDtag, by conducting reception/transmission of a signal between the R/W 5and the ID tag 2 through the resonant circuit portion 4. In aninspection system of products contained in the baggage according to thepresent invention, the resonant circuit portion 4 is provided for thepackage body such as a suitcase 35 containing the product 1. Thus,communication disabled or communication instability due to directivity(a property of going in only a certain direction or a property ofreceiving from only a certain direction) between the R/W 5 and the IDtag 2 attached to a product 1 can be solved and communication betweenthem can be conducted surely.

Note that information that is received by the antenna portion 6 andstored in the ID tag 2 is processed by the computer 9 connected to theR/W 5. In addition, when a tag 36 attached to the baggage such as thesuitcase 35 is an ID tag, information stored in the ID tag 2 attached tothe product 1 is written and read by the R/W 5, and simultaneouslyinformation stored in the tag 36 can be written and read by the R/W 5.

A display screen may be provided for the R/W 5 or the computer 9 asnecessary, and read information on the product 1 or information of thetag 36 may be displayed appropriately thereon. For example, all piecesof information of the product such as a product name, a country oforigin, weight, price or information stored in the tag 36 such as adeparture place, a route, a destination are displayed.

Further, a database 10 may be connected to the computer 9. Theinformation on the product 1 read by the R/W 5 and the information onthe product stored in the database may be cross-checked, and thus it canbe determined instantly whether the product 1 contained in the suitcase35 is an appropriate product (a product that is not a forged product, adangerous material or the like). In addition, retention of a forgedproduct or the like that is not stored in the database can berecognized, if the total weight of the baggage is not equal to the totalweight of the products that is read by the R/W 5 (or weight obtained byinquiry with the database). In this manner, forged products can beinterdicted at the border, and smuggling of forged products andterrorism can be prevented beforehand.

Embodiment 2

Embodiment 2 describes another example of applying the present inventionwith reference to FIG. 4. In FIG. 4, a product 1 contained in a packagebody 3 is loaded in a transportation vehicle 38 such as an autotruck. AnID tag 2 is attached to a product 1 and a resonant circuit portion 4(hereinafter, referred to as a first resonant circuit portion in thisembodiment) is formed in the package body 3. Further, another resonantcircuit portion 39 (hereinafter, referred to as a second resonantcircuit portion in this embodiment) that is at least one and isdifferent from the resonant circuit portion 4 is provided in a doorportion or a frame portion of the transportation vehicle 38. The firstresonant circuit portion may be provided for an outer surface of thepackage body 3; however, is preferably formed inside or an interiorportion of a cover for preventing separation due to external force,theft and the like. The second resonant circuit portion may be providedfor an outer surface of a door portion or a frame portion of thetransportation vehicle 38; however, is preferably formed inside or aninterior portion of a cover for preventing separation due to externalforce, theft and the like.

When information on the product 1 stored in the ID tag 2 from theoutside of the transportation vehicle 38 is read and written with an R/W5, an electromagnetic wave transmitted from an antenna portion 6 of theR/W 5 is received by the second resonant circuit portion and transmittedto the first resonant circuit portion. The electromagnetic wavetransmitted to the first resonant circuit portion is further transmittedto the ID tag 2. In some cases, an electromagnetic wave is directly tothe ID tag 2 from the second resonant circuit portion, if the ID tag 2exists in the periphery of the second resonant circuit portion. Also, anelectromagnetic wave from the R/W 5 is directly received by the firstresonant circuit portion or the ID tag 2 in some cases. However, byproviding the second resonant circuit portion, communication disabled orcommunication instability due to directivity (a property of going inonly a certain direction or a property of receiving from only a certaindirection) between the R/W 5 and the ID tag 2 attached to the product 1can be solved and thus, the communication between them can be conductedsurely.

The first and second resonant circuit portions each include at least anantenna coil serving as inductance and a capacitor similarly to thatshown in FIG. 2. And each resonant circuit portion is designed toresonate with almost the same frequency as that of an electromagneticwave transmitted from the R/W 5. In other words, the values ofinductance L of the antenna coil and capacitance C of the capacitorconstituting each resonant circuit portion are adjusted to resonate withthe R/W 5.

The first and second resonant circuit portions can receive analternating electromagnetic wave efficiently from the R/W 5 since theseresonant circuit portions resonate with almost the same frequency asthat of the R/W 5. Further, power supply to the ID tag 2 is performedand transmission/reception of a signal between the ID tag 2 and the R/W5 is partially or wholly conducted, by adopting an electromagneticcoupling method, an electromagnetic induction method, an electrostaticcoupling method or the like between the first and second resonantcircuit portions, between the ID tag and the first resonant circuitportion, and between the ID tag and the second resonant circuit portion.Note that communication between the R/W 5 and the ID tag can beconducted even when the transportation vehicle 38 stops or runs.

As described above, when the product 1 is covered with a plurality ofbarriers (here, the package body 3 and the transportation vehicle 38), asignal is received and transmitted between the ID tag 2 and the R/W 5through the resonant circuit portion provided for each barrier, and thusit can be conducted securely to read and erase information stored in theID tag 2, and to write, or overwrite information to the ID tag 2.

Note that information which is received by the antenna portion 6 andthen stored in the ID tag 2 is processed by the computer 9 connected tothe R/W 5. A display screen 7 may be provided for the R/W 5 asnecessary, and read information on the product 1 may be displayedappropriately. For example, all pieces of information of the product 1such as a product name, quantity, a ship-to address, a ship-fromaddress, a country of origin, a producer, a production season aredisplayed. The display screen may be provided for the computer 9.Operation keys 8 are provided for the R/W 5, and ON/OFF of communicationwith the ID tag 2 can be controlled, and also selection, deletion andthe like of the read information can be conducted.

Further, a database 10 may be connected to the computer 9. Theinformation on the product 1 read by the R/W 5 and the information onthe product stored in the database can be cross-checked.

Embodiment 3

Embodiment 3 describes an example of communication methods according tothe present invention with reference to FIGS. 5A to 5C.

As the communication methods according to the present invention, thereare cases where communication method between an R/W 5 and a resonantcircuit portion 4 is identical to that between an ID tag 2 and theresonant circuit portion 4, and where communication method between theR/W 5 and the resonant circuit portion 4 is different from that betweenthe ID tag 2 and the resonant circuit portion 4. In the case of using anidentical communication method, as shown in FIG. 5A, an electromagneticinduction method (in general, the communication range of about 1 m orless) can be adopted in the both methods as an example. In the case ofusing the electromagnetic induction method, frequency to be used may beadopted widely from less than 135 KHz, more than 13.56 MHz and the rangefrom 135 KHz to 13.56 MHz. Typically, 4.9 MHz, 13.56 MHz, 900 MHz bandsare employed.

In addition, in the case of using an identical communication method,even if the resonant circuit portion 4 does not function for any reason,communication can be conducted by direct reception/transmission of anelectromagnetic wave between the R/W 5 and the ID tag 2.

In the case of employing the different communication method, shown inFIG. 5B, for example, an electromagnetic induction method is used forcommunication between the R/W 5 and the resonant circuit portion 4, andan electromagnetic coupling method can be used for communication betweenthe resonant circuit portion 4 and the ID tag 2. The electromagneticcoupling method has a shorter communication range than theelectromagnetic induction method (in general, the communication range ofseveral tens mm or less). In the case of the electromagnetic couplingmethod, almost the same frequency can be adopted as that of theelectromagnetic induction method.

As shown in FIG. 5C, the communication between the R/W 5 and theresonant circuit portion 4 adopts a microwave method (in general, thecommunication range of about 3 m or less) and the communication betweenthe resonant circuit portion 4 and the ID tag 2 can adopt theelectromagnetic induction method or the electromagnetic coupling methodthat has a shorter communication range than the microwave method. In thecase of microwave method, frequency to be used is generally 2.45 GHzband.

Specifically, as the communication method between the R/W 5 and theresonant circuit portion 4, the electromagnetic induction method or amicrowave method is employed, and the communication range between theR/W 5 and the resonant circuit portion 4 is made larger than thatbetween the resonant circuit portion 4 and the ID tag 2, thereby the R/W5 in the distance can communicate with the ID tag 2.

Note that when the communication method is changed before and after anelectromagnetic wave passes through the resonant circuit portion 4,circuit elements such as the antenna coil and the capacitor, andarrangement thereof in the resonant circuit portion 4 may be changeddepending on the communication method.

Of course, the combination of the communication methods is not limitedto these in the present invention. Further, an electrostatic couplingmethod or an optical communication system may be combined.

As shown in Embodiment 2, if resonance circuit portions are provideddoubly or triply, the above described communication methods can becombined appropriately. Note that the resonant circuit portions arepreferably designed so that the range between the R/W 5 and theresonance circuit portions can be as long as possible.

Embodiment 4

Embodiment 4 describes specifically an example of an ID tag 2configuration according to the present invention with reference to FIG.6. FIG. 6 shows a schematic diagram of the ID tag 2 which includes apower supply circuit 214, an input-output circuit 215, an antennacircuit 216, a logic circuit 210, an amplifier 211, a clock generationcircuit-decoder 212, a memory 213, and the like. The antenna circuit 216has an antenna wiring 201 and an antenna capacitor 202.

The ID tag operates without its own power supply since electric power issupplied by receiving an electromagnetic wave 17 emitted from an R/W 5.When the antenna circuit 216 receives the electromagnetic wave 17 fromthe R/W 5, a signal as a detected output signal is detected by theinput-output circuit 215 including a first capacitor means 203, a firstdiode 204, a third diode 207, a third capacitor means 208, and the like.This signal is amplified by the amplifier 211 to have a sufficient largeamplitude, and then, divided into a clock and data-instruction by theclock generation circuit-decoder 212. The transmitted instruction isdecoded by the logic circuit 210 to make a reply of data in the memory213 and write necessary information in the memory, for example.

The reply is made by ON/OFF of a switching element 209 in accordancewith the output of the logic circuit 210. This changes the impedance ofthe antenna circuit 216, which results in a change in reflectivity ofthe antenna circuit 216. The R/W 5 reads information from the ID tag bymonitoring the change in reflectivity of the antenna circuit 216.

The electric power to be consumed by the respective circuits in the IDtag 2 is supplied from a direct-current power source VDD generated bydetecting and smoothing the electromagnetic wave 17 received by thepower supply circuit 214. The power supply circuit 214 has the firstcapacitor means 203, the first diode 204, a second diode 205, and asecond capacitor means 206, similarly to the input-output circuit 215,and the second capacitor means 206 is controlled to have a sufficientlylarge value in order to supply electric power to the respectivecircuits.

Embodiment 5

In Embodiment 5 a specific manufacturing method of an ID tag 2 will bedescribed with reference to FIGS. 7A to 10O. For simplification, themanufacturing method will be described here by showing cross-sectionalstructures of a CPU and memory using an n-channel TFT and a p-channelTFT.

A plurality of TFTs, a protective film, various wirings and an antenna(an element or a circuit including at least these elements referred toas a thin film integrated circuit portion, hereinafter) are formed overa substrate 40.

First, a separation layer 41 is formed on a substrate 40 (FIG. 7A). Ana-Si film (amorphous silicon film) with a film thickness of 50 nm (500Å) is formed on a glass substrate (for example, a Corning 1737substrate) by a sputtering method here. As the substrate, in addition toa glass substrate, substrates such as a quartz substrate, a substrateincluding an insulating material such as alumina, a silicon wafersubstrate, a thermal silicon oxide substrate, a SIMOX substrate and aheat-resistant plastic substrate that can withstand processingtemperatures in subsequent processes, can be used.

As the separation layer, in addition to amorphous silicon, a layerincluding silicon as its main component, such as polycrystallinesilicon, single-crystal silicon, or SAS (semi-amorphous silicon (alsoreferred to as micro-crystalline silicon)), can be used. Theseseparation layers may be formed by a method such as CVD instead of asputtering method. It is preferable that the film thickness of theseparation layer is made to be 50 to 54 nm (500 to 540 Å). As for SAS,the film thickness may be 30 to 50 nm (300 to 500 Å).

Next, a protective film 42 (also referred to as a base film or a baseinsulating film) is formed over the separation layer 41 (FIG. 7A).Although a three-layered structure of a SiON film with a film thicknessof 100 nm, a SiNO film with a film thickness of 50 nm, and a SiON filmwith a film thickness of 100 nm is employed here, the materials, thefilm thicknesses, or the number of laminations are not limited to this.For example, instead of the lower SiON film, a heat-resistant resin suchas siloxane with a film thickness of 0.5 to 3 μm may be formed by amethod such as spin coating, slit coater, or droplet discharging.Alternatively, a silicon nitride film (for example, SiN or Si₃N₄) may beused. It is preferable that each film thickness is made to be 0.05 to 3μm, which can be freely selected within the range.

The silicon oxide film can be formed by a method such as thermal CVD,plasma CVD, atmospheric CVD, or bias ECRCVD with the use of a mixed gassuch as a SiH₄—O₂ mixed gas or a TEOS (tetraethoxysilane)-O₂ mixed gas.The silicon nitride film can be formed typically by a plasma CVD methodwith the use of a SiH₄—NH₃ mixed gas. The SiON film or SiNO film can beformed typically by a plasma CVD method with the use of a SiH₄—N₂O mixedgas.

In the case where a material including silicon such as a-Si as a maincomponent is used as the separation layer 41 and an island-likesemiconductor film 43 to be formed later, as the protective film 42 incontact with those, SiOxNy may be used from the viewpoint of ensuringadhesion.

Next, thin film transistors (TFTs) constituting a part of a CPU and amemory of a thin film integrated circuit portion are formed over theprotective film 42. In addition to the TFTs, thin film active elementssuch as organic TFTs and thin film diodes can also be formed.

In a method for manufacturing the TFTs, island-like semiconductor films43 are formed first on the protective film 42 (FIG. 7B). The island-likesemiconductor films 43 are formed by using an amorphous semiconductor, acrystalline semiconductor, or semi-amorphous semiconductor. In any case,it is possible to use a semiconductor film including a material such assilicon or silicon-germanium (SiGe) as its main component.

In this embodiment, amorphous silicon with a film thickness of 70 nm isformed, and a treatment with a solution including nickel is furthergiven to the surface of the amorphous silicon. Further, a crystallinesilicon semiconductor film is obtained by a thermal crystallizationprocess at 500 to 750° C., and laser crystallization is performed toimprove the crystallinity. As a method for deposition, a method such asplasma CVD, sputtering, or LPCVD may be used. As a method forcrystallization, a method such as laser crystallization, thermalcrystallization, or thermal crystallization using another catalyst (suchas Fe, Ru, Rh, Pd, Os, Ir, Pt, Cu, or Au) may be used, furthermore theabove-mentioned methods may be used alternatively more than once.

For crystallization of a semiconductor film having an amorphousstructure, a continuous-wave laser may be used. In order to obtain alarge-grain crystal by crystallization, it is preferable to use acontinuous-wave solid laser and apply any of the second to fourthharmonics of the fundamental wave (the crystallization in this case isreferred to as “CWLC”). Typically, the second harmonic (532 nm) or thirdharmonic (355 nm) of an Nd:YVO₄ laser (fundamental wave: 1064 nm) may beused. In the case of using a continuous-wave laser, laser light emittedfrom continuous-wave YVO₄ laser with 10 W output is converted into aharmonic by a non-linear optical element. There is also a method inwhich one of an YVO₄ crystal or a GdVO₄ crystal and a non-linear opticalelement are put in a resonator to emit a harmonic. Then,rectangular-shaped or elliptic-shaped laser light is preferably formedon a surface to be irradiated by an optical system to irradiate anobject to be processed. In this case, a power density of approximately0.01 to 100 MW/cm² (preferably, 0.1 to 10 MW/cm²) is necessary. Thesemiconductor film may be moved to be irradiated at a speed ofapproximately 10 to 2000 cm/s relatively with respect to the laserlight.

In the case of using a pulsed laser, a frequency band of several tens toseveral hundreds Hz is generally used. However, a pulsed laser with arepetition frequency of 10 MHz or more, which is much higher than thefrequency band, may be used. Since the period from laser irradiation toa semiconductor film by a pulsed laser to perfect solidification of thesemiconductor film is said to be several tens to several hundreds nsec,the use of the above-mentioned high frequency band allows to emit thenext pulsed laser light during the period from melting of asemiconductor film by laser light to solidification thereof.Accordingly, a solid-liquid interface can be continuously moved in asemiconductor film unlike a case of using a conventional pulsed laser,so that a semiconductor film that has crystal grains grown continuouslyalong the scanning direction is formed. Specifically, an assembly ofcrystal grains having a width of about 10 to 30 μm in the scanningdirection and a width of about 1 to 5 μm in a direction perpendicular tothe scanning direction can be formed. The formation of single-crystalgrains long extended along the scanning direction makes it possible toform a semiconductor film in which there are almost no crystal grainboundaries in at least a channel direction of a TFT.

In the case of using siloxane that is a heat-resistant resin for aportion of the protective film 42, heat can be prevented from leakingfrom the semiconductor film during the crystallization described above,so that the crystallization can be performed efficiently.

According to the method described above, the crystalline siliconsemiconductor film is obtained, where it is preferable that crystals areoriented in a source-channel-drain direction and the thicknesses of thecrystal layers are made to be 20 to 200 nm (typically, 40 to 170 nm,more preferably, 50 to 150 nm). After that, an amorphous silicon filmfor gettering of the metal catalyst is formed over the semiconductorfilm with an oxide film interposed therebetween, and a gettering isperformed by a heat treatment at 500 to 750° C. Further, in order tocontrol a threshold voltage of a TFT element, boron ions of the doseamount on the order of 10¹³/cm² are added into the crystalline siliconsemiconductor film. After that, the island-like semiconductor films 43are formed by etching with a resist as a mask.

When a crystalline semiconductor film is formed, disilane (Si₂H₆) andgermanium tetrafluoride (GeF₄) may be used as a material gas to form apolycrystalline semiconductor film directly by a LPCVD method (lowpressure CVD), so that the crystalline semiconductor film can beobtained. In this case, the gas flow rate may be Si₂H₆/GeF₄=20/0.9, thedeposition temperature may be 400 to 500° C., and He or Ar may be usedas a carrier gas. However, the conditions are not limited to these.

It is preferable that a channel region in the TFT is particularly dopedwith hydrogen or halogen of 1×10¹⁹ to 1×10²² cm³, preferably 1×10¹⁹ to5×10²⁰ cm⁻³, or 1×10¹⁹ to 2×10²¹ cm⁻³ in the case of SAS. In any case,the amount of hydrogen or halogen included in the channel region in theTFT may be more than that included in a single crystal to be used for anIC chip. This makes it possible, even when local cracks are generated ina TFT portion, to terminate the local cracks with hydrogen or halogen.

In the case of using a SAS (semiamorphous semiconductor) or the like, acrystallization process of the semiconductor film (a high-temperatureheat treatment process) can be omitted. In this case, a chip can beformed directly on a flexible substrate. According to the presentinvention, a silicon wafer is not used in principle; however, a siliconwafer may be used as a separation substrate before transferring onto aflexible substrate or the like.

Next, a gate insulating film 44 is formed over the island-likesemiconductor films 43 (FIG. 7B). It is preferable that a method forforming a thin film such as plasma CVD or sputtering is used to form asingle layer or laminated layers of a layer including silicon nitride,silicon oxide, silicon nitride oxide, or silicon oxynitride as the gateinsulating film. In the case of the laminated layers, for example, athree-layered structure of a silicon oxide film, a silicon nitride film,and a silicon oxide film, from the substrate side, may be preferablyemployed.

Next, a gate electrode 46 is formed (FIG. 7C). In this embodiment, afterlaminating and forming Si and W (tungsten) by sputtering, etching isconducted by using a resist 45 as a mask to form the gate electrode 46.Of course, the material, structure, or manufacturing method of the gateelectrodes 46 is not limited to this, which can be appropriatelyselected. For example, a laminated structure of an n-type impurity dopedor non-doped Si and NiSi (nickel silicide) or a laminated structure ofTaN (tantalum nitride) and W may be employed. Alternatively, variousconductive materials may be used to form the gate electrode 46 as asingle layer.

Instead of the resist mask, a mask such as SiOx may be used. In thiscase, a process of forming a mask such as SiOx or SiON (which is calleda hard mask) by patterning is added. However, since the mask is lessreduced during etching than the resist, a gate electrode layer with adesired width can be formed. Alternatively, without using the resist 45,a droplet discharging method may be used to form the gate electrode 46selectively.

As conductive materials, various materials can be selected depending onthe function of a conductive film. In the case of forming the gateelectrode and an antenna at the same time, materials may be selected inconsideration of their functions.

As an etching gas in the case of forming the gate electrode by etching,a mixed gas in which CF₄, Cl₂ and O₂ are mixed or a Cl₂ gas is used.However, the etching gas is not limited to these gases.

Next, portions to become p-channel TFTs 54 and 56 are covered by aresist 47, and the island-like semiconductor films to become n-channelTFTs 53 and 55 are doped with an impurity element 48 (typically, P(phosphorus) or As (arsenic)) imparting n-type conductivity to form alow concentration impurity region with the gate electrode as a mask (afirst doping process shown in FIG. 7D). The conditions of the firstdoping process are as follows: dose amount is 1×10¹³ to 6×10¹³/cm² andaccelerating voltage is 50 to 70 keV. However, the conditions are notlimited to these. By this first doping process, doping through the gateinsulating film 44 is conducted to form a pair of low concentrationimpurity regions 49. The first doping process may be conducted to thewhole area without covering the p-channel TFT regions with the resist.

Next, after removing the resist 47 by a method such as ashing, a newresist 50 is formed to cover an n-channel TFT region, and theisland-like semiconductor films to become the p-channel TFTs 54 and 56are doped with an impurity element 51 (typically, B (boron)) impartingp-type conductivity to form a high concentration impurity region withthe gate electrode as a mask (a second doping process shown in FIG. 7E).The second doping process is performed under conditions as follows: doseamount is 1×10¹⁶ to 3×10¹⁶/cm² and accelerating voltage is 20 to 40 keV.By this second doping process, doping through the gate insulating film44 is conducted to form a pair of high concentration p-type impurityregions 52.

Next, after removing the resist 50 by a method such as ashing, aninsulating film 59 is formed over the substrate (FIG. 8F). In thisembodiment, a SiO₂ film with a film thickness of 100 nm is formed by aplasma CVD method. Thereafter, the insulating film 59 and the gateinsulating film 44 are etched and removed to form sidewalls 60 in a selfalignment manner (FIG. 8G). As the etching gas, a CHF₃—He mixed gas isused.

The method for forming the sidewalls 60 is not limited to the methoddescribed above. For example, after forming the insulating film 59, thewhole surface of the substrate may be covered by a resist and theresist, the insulating film 59 and the gate insulating film 44 may beetched and removed by an etchback method to form a sidewall 60 in a selfalignment manner. Further, if the insulating film 59 is formed on theopposite sides of the substrate due to the property of the film formingmethod, a back-side treatment is conducted using the resist as a mask toremove the insulating film formed on the backside of the substrate, andthen an etchback treatment may be conducted.

The insulating film 59 may have a laminated layer structure of two ormore layers. For example, a two-layered structure of a SiON (siliconoxynitride) film with a film thickness of 100 nm and an LTO film (LowTemperature Oxide Film) with a film thickness of 200 nm is employed,where the SiON film is formed by a plasma CVD method and a SiO₂ film isformed by a low pressure CVD method as the LTO film. The shape of thesidewall 60 is not limited to that shown in at least FIG. 8G. Thesidewall may have an L-shape or a combined shape of an L-shape and acircular shape.

The above-described sidewall functions as a mask for forming a lowconcentration impurity region or a non-doped offset region below thesidewall 60 when doping of a high concentration n-type impurity elementis performed later. In any of the above-described methods for formingthe sidewalls, the condition for etchback and the thickness of theinsulating film 59 may be appropriately changed depending on the desiredwidth of a low concentration impurity region or offset region.

Next, a new resist 61 is formed to cover the p-channel TFT regions, andwith the gate electrode 46 and the sidewall 60 as masks, doping of animpurity element 62 imparting n-type conductivity (typically, P or As)is performed to form a high concentration impurity region (a thirddoping process shown in FIG. 8H). The third doping process is performedunder conditions as follows: dose amount is 1×10¹³ to 5×10¹⁵/cm² andaccelerating voltage is 60 to 100 keV. By this third doping process,doping through the gate insulating film 44 is conducted to form a pairof high concentration n-type impurity regions 63.

After removing the resist 61 by a method such as ashing, the impurityregions may be thermally activated. For example, after forming a SiONfilm of 50 nm, a heat treatment may be performed at 550° C. for 4 hoursin a nitrogen atmosphere. In addition, after forming a SiNx filmincluding hydrogen to have a film thickness of 100 nm, defects of thecrystalline semiconductor film can be repaired by a heat treatment at410° C. for 1 hour in a nitrogen atmosphere. This is a process, forexample, for terminating dangling bonds existing in crystalline silicon,and is referred to as a hydrogenation treatment process. Further, afterthat, a SiON film with a film thickness of 600 nm may be formed as a capinsulating film protecting the TFTs. The hydrogenation treatment processmay be performed after forming the SiON film. In this case, the SiONfilm can be formed continuously on SiNx film. In this way, thethree-layered insulating films of SiON, SiNx, SiON are formed over theTFTs. However, the structures or materials of the insulating films arenot limited to these. These insulating films, which also have a functionof protecting the TFTs, are preferably formed.

Next, an interlayer film 64 is formed over the TFTs (FIG. 8I). Organicresin having heat-resistance such as polyimide, acryl and polyimide, andresin having heat-resistance such as siloxane and the like can be usedfor the interlayer film 64. In forming the interlayer film 64, aspin-coating method, a dipping method, a spray coating method, a dropletdischarging method (such as an ink-jet method, a screen-printing method,an off-set printing method), a doctor knife, a roll coater, a curtaincoater, a knife coater, and the like can be employed depending on thematerial of the interlayer film. Further, an inorganic material may beused. In that case, silicon oxide, silicon nitride, silicon oxynitride,PSG (phosphorus silicate glass), PBSG (phosphorus boron silicate glass),BPSG (borophosphosilicate glass), an alumina film and the like can beused. Note that these insulating films may be laminated to form theinterlayer film 64.

Further, a protective film 65 may be formed over the interlayer film 64.As the protective film 65, a film containing carbon such as DLC (DiamondLike Carbon) or carbon nitride (CN), a silicon oxide film, a siliconnitride film, a silicon nitride oxide film, or the like can be employed.As for the forming method, plasma CVD, atmospheric plasma, or the likecan be employed. Alternatively, a photosensitive or nonphotosensitiveorganic material such as polyimide, acrylic, polyamide, resist, andbenzocyclobutene, or a heat-resistant resin such as siloxane resin maybe employed.

Note that a filler may be mixed into the interlayer film 64 or theprotective film 65 in order to prevent film detachment or a crack ofthese films due to stress generated by a difference of a thermalexpansion coefficient between the interlayer film 64 or the protectivefilm 65 and a conductive material or the like of a wiring to be formedat a subsequent step.

A contact hole is formed by etching after a resist is formed. A wiring66 for connecting TFTs and a connection wiring 67 to be connected to anantenna are formed (FIG. 8I). As for an etching gas to be used forforming the contact hole, a CHF₃—He mixed gas is employed, but thepresent invention is not limited to this.

Here, the wiring 66 has a five-layer structure in which Ti, TiN, Al—Si,Ti and TiN are stacked from the substrate side. The wiring is preferablyformed by a sputtering method and patterned. By mixing Si into the Allayer, the generation of hillocks can be prevented during resist bakingwhen the wiring is patterned. Instead of the Si, Cu of about 0.5% may bemixed. In addition, by sandwiching the Al—Si layer with Ti or TiN,hillock resistance can be further improved. At the patterning, theabove-described hard mask of SiON or the like is preferably employed.Note that the material and the forming method of these wirings are notlimited to these, and the aforementioned material for forming the gateelectrode may be employed.

The materials of the wiring 66 and the connection wiring 67 may beidentical or different. As a forming method thereof, pattering may beperformed with the use of a resist mask after forming a film over awhole surface of the substrate by sputtering, or a droplet dischargingmethod may be used for forming the wiring selectively with a nozzle.Note that a droplet discharging method includes screen printing, offsetprinting as well as ink-jet. The wiring and the antenna may be formed atthe same time, or one may be formed on the other which has been formedin advance.

In this embodiment, a TFT region having the CPU 57, the memory 58 andthe like, and the antenna connection portion 68 are formed separately;however, the present invention can be applied when the TFT region andthe antenna are integrated.

Through the processes described above, a thin film integrated circuitportion including TFTs is completed. Although a top-gate structure isemployed in this embodiment, a bottom-gate structure (inverselystaggered structure) may be employed. The materials of the baseinsulating film, the interlayer insulating film, and the wiring aremainly provided in a region where there is no thin film active elementportion (active element) such as a TFT, where it is preferable that theregion occupies 50% or more of the whole of the thin film integratedcircuit portion, preferably 70 to 95% thereof. This makes it easier tobend and treat the ID tag 2 that is a completed article. In this case,it is preferable that the island-like semiconductor region (island) ofactive elements including the TFT portions occupies 1 to 30% of thewhole of the thin film integrated circuit portion, preferably 5 to 15%thereof.

In addition, as shown in FIG. 8I, it is preferable to control thethickness of the upper and lower protective film and the interlayer filmso that the distance (t_(under)) from the semiconductor layer of the TFTto the lower protective film and the distance (t_(over)) from thesemiconductor layer to the upper interlayer film (a protective film inthe case where the protective film is formed) are equal or substantiallyequal to each other in the thin film integrated circuit portion. Bylocating the semiconductor layer in the center of the thin filmintegrated circuit portion in this way, stress to the semiconductorlayer can be eased, and cracks can be prevented from being generated.

The TFTs manufactured according to this embodiment have a S value(subthreshold value) of 0.35 V/dec or less (preferably, 0.07 to 0.25V/dec) and a mobility of 10 cm²/Vsec or more, and further have acharacteristic of 1 MHz or more, preferably 10 MHz or more on the levelof ring oscillator (at 3 to 5 V) or have a frequency characteristic pergate of 100 kHz or more, preferably 1 MHz or more (at 3 to 5 V).

After a plurality of thin film integrated circuit portions are formedover the substrate 40 (FIG. 9J), a groove 70 is formed by dicing and theplurality of thin film integrated circuit portions are isolated for eachID tag to obtain thin film integrated circuit portions 69 (FIG. 9K). Inthis case, a blade dicing method using a dicing device (dicer) iscommonly used. The blade is a grinding stone into which a diamondabrasive is implanted, which has a width of about 30 to 50 μm. Byrapidly spinning this blade, the thin film integrated circuit portionsare isolated for each ID tag. An area necessary for dicing is referredto as a street, which preferably has a width of 80 to 150 μm inconsideration of damage to the elements.

In addition to dicing, a method such as scribing or etching with the useof a mask can be used. In the case of scribing, there are methods suchas diamond scribing and laser scribing. In the case of employing laserscribing, linear laser light with power of 200 to 300 W emitted from apulsed laser resonator, for example, a fundamental wave of 1064 nm inwavelength or the second harmonic of 532 nm in wavelength of an Nd:YAGlaser, can be used.

In the case of etching, after forming a mask pattern according toprocesses of light-exposure and development, the elements can beseparated from each other by dry etching. In dry etching, atmosphericplasma may be used. As a gas for dry etching, a chlorine-based gastypified by Cl₂, BCl₃, SiCl₄, CCl₄ or the like, a fluorine-based gastypified by CF₄, SF₆, NF₃, CHF₃ or the like, and O₂ is used. However,the gas for dry-etching is not limited to these. The etching can also beperformed by using atmospheric plasma. In this case, a CF₄—O₂ mixed gasis preferably used as the etching gas. The groove 70 may be formed byetching more than once with the use of different kinds of gasses. Ofcourse, the groove 70 may be formed by wet etching.

When the groove 70 is formed, the groove may have a depth to the pointthat at least a surface of the separation layer is exposed, and it ispreferable that the method such as dicing is appropriately controlled inorder not to scratch the substrate so that the substrate 40 can be usedrepeatedly.

Next, a jig 72 (supporting substrate) with protrusions 71 is attached toeach of the thin film integrated circuits portions 69 with an adhesiveagent 73 interposed therebetween (FIG. 9L). The jig has a function oftemporarily fixing the plurality of thin film integrated circuitportions in order to prevent the thin film integrated circuit portionsfrom separating discretely after removing the separation layer. It ispreferable that the jig has a structure that has protrusions 71 and thatis a comb-like, as shown in FIG. 9L, in order to make it easier tointroduce a gas or liquid including halogen fluoride later. However, aflat jig may be used. More preferably, an opening portion 74 may beprovided in order to make it easier to introduce a gas or liquidincluding halogen fluoride later.

As the jig 72, for example, a glass substrate, quartz substrateincluding silicon oxide as its main component, and stainless (SUS)substrate, which are not damaged by halogen fluoride, can be used. Aslong as a material that is not damaged by halogen fluoride is used, thejig is not limited to these substrates.

As the adhesive agent 73, typically, a material whose adhesive force(adhesion) is reduced or lost by UV-light irradiation can be used. AnUV-irradiation separating tape manufactured by Nitto Denko is used here.In addition to this, an adhesive agent that can be attached and detachedrepeatedly may be used, which is used for products such as “Post-it”(registered trademark) manufactured by THREE M INNOVATIVE PROPERTIES and“NOTESTIX” (registered trademark) manufactured by MOORE BUSINESS FORMSINC. For example, an acrylic adhesive, a synthetic rubber adhesive, anda natural rubber adhesive, described in Japanese Patent ApplicationLaid-Open No. 2001-30403, Japanese Patent No. 2992092, and JapanesePatent Application Laid-Open No. H6-299127, can be used. Of course, aslong as a material to be used can easily remove the jig, the adhesiveagent is not limited to these materials. An adhesive agent that can beseparated without UV-light irradiation or the like may be employed.

Next, an a-Si film that is the separation layer is etched and removed byintroducing a halogen fluoride gas 75 into the groove 70 (FIG. 10M). Alow pressure CVD system shown in FIG. 12 is used here to etch and removethe a-Si film under conditions of gas: ClF₃ (chlorine trifluoride),temperature: 350° C., flow rate: 300 sccm, pressure: 8×10² Pa, and time:3 hours. However, the conditions, which are not limited, may beappropriately changed. Alternatively, a gas of ClF₃ gas mixed withnitrogen may be used, where the flow rate of the both gases can beappropriately set. In addition to ClF₃, a gas such as BrF₃ or ClF₂ mayalso be used.

The low pressure CVD system shown in FIG. 12 has a mechanism that ahalogen fluoride gas such as a ClF₃ gas 75 is introduced into a bell jar86 that is a reaction field to circulate the gas to a substrate 87. Inaddition, a heater 88 is provided outside the bell jar, and a remaininggas is exhausted from an exhaust pipe 89.

While silicon is selectively etched by halogen fluoride such as ClF₃,silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride(SiOxNy or SiNxOy) is hardly etched. Accordingly, the separation layer41 is etched with time, so that the substrate 40 can finally beseparated (FIG. 10N). On the other hand, the protective film that is abase film, interlayer film, or protective film including a material suchas silicon oxide, silicon nitride, silicon oxynitride, or aheat-resistant resin is hardly etched, damage to the thin filmintegrated circuits can be prevented. The substrate 40 that has beenseparated can be, of course, reused, which leads to more reduction incost than the case of grinding a silicon wafer in a conventional manner.

Next, the adhesion of the adhesive agent 73 is reduced or lost byUV-light irradiation to separate the jig 72 from the thin filmintegrated circuit portions 69 (FIG. 10O). It is preferable to reuse thejig 72 for reduction in cost.

The thin film integrated circuit portion 69 isolated for each ID tag bythe above method is transported by small vacuum tweezers or the like.The thin film integrated circuit portions are coated as shown in FIGS.11A and 11B to complete the ID tag 2, for example.

FIGS. 11A and 11B show a schematic diagram of a manufacturing line of anID tag 2 and a magnified drawing of the ID tag as a completed article.Initially, as shown in FIG. 11A, a material that is to be an inletsubstrate 81 (FIG. 11B) of the ID tag 2 is supplied from a substratesupplying means 76. The inlet substrate 81 may have a single layerstructure or a laminated layer structure.

An antenna 82 is formed in the inlet substrate 81 in advance. As aconductive material of the antenna 82, Ag, Au, Al, Cu, Zn, Sn, Ni, Cr,Fe, Co or Ti or an alloying including the elements can be usedtypically. Note that the antenna 82 is formed to include a materialhaving sufficient malleability and ductility and more preferably, isformed to be thick so as to endure stress due to transformation. Notethat the antenna 82 is formed and then may be covered by a protectivefilm.

As a forming method of the antenna 82, pattering may be performed withthe use of a resist mask after forming a film over a whole surface ofthe substrate by sputtering, or a droplet discharging method may be usedfor forming selectively with a nozzle. Note that a droplet dischargingmethod includes screen printing, offset printing as well as ink-jet.

Then, the thin film integrated circuit portion 69 is attached (bonded)to a desired region of the inlet substrate 81 by an attaching means 77.At this time, an anisotropic conductive film (ACF), an ultrasonicbonding method, a UV bonding method and the like are employedappropriately as the bonding method. In the case where the thin filmintegrated circuit portion 69 is attached to the inlet substrate 81, thethin film integrated circuit portions 69 may be attached to the inletsubstrates 81 that have been already isolated for each ID tag, or thematerial of the inlet substrate 81 in which the thin film integratedcircuit portions 69 have been already provided may be isolated for eachID tag. Note that the material of the inlet substrate 81 may beroll-like, plate-like or the like. By employing a laminating device 79,the periphery of each inlet substrate 81 is covered in a laminatingprocess. The periphery of the thin film integrated circuit portion 69may be covered in advance by a filling layer 83 containing filler 84. Inaddition, a laminate resin layer 85 may be filled with filler.

In this manner, the ID tag 2 is completed. After forming the thin filmintegrated circuit portion 69 in a desired position of the band-likesubstrate and performing a laminating process, the substrate may beisolated for each ID tag. The ID tag 2 that has been subjected to thelaminate processing is collected by a collecting means 80.

Note that a coating means of the thin film integrated circuit portion 69is not limited to a laminating method. In addition, a material forcoating can employ various materials such as a paper or a resinappropriately. For example, a flexible resin material such as plastichaving flexibility is used and thus the ID tag 2 can be treated easily.

FIG. 11B is a cross sectional and magnified view of the ID tag 2manufactured in this embodiment. The antenna 82 and the thin filmintegrated circuit portion 69 connected to the antenna 82 are formed onthe inlet substrate 81, and the inlet substrate 81 is covered by thelaminate resin layer 85 with the filling layer 83 containing the filler84. The antenna 82 may be directly connected to the thin film integratedcircuit portion 69 or a connection pad portion including a conductivematerial may be formed between the antenna 82 and the thin filmintegrated circuit portion 69.

In order to protect the thin film integrated circuit portion 69 and theantenna 82 in a heat treatment or the like during the laminatingprocess, it is preferable to use a heat-resistant resin such as siloxanefor the filling layer 83. In addition, a protective film may be formedseparately. As the protective film, a film including carbon such as DLCor carbon nitride (CN), a silicon nitride film, a silicon nitride oxidefilm or the like can be used. However, the protective film is notlimited to these. As a forming method thereof, a method such as plasmaCVD or atmospheric plasma can be used.

In this embodiment, as a method for separating the substrate, a methodmay be employed, in which stress is given to the substrate provided witha plurality of thin film integrated circuit portions to separate thesubstrate physically. In this case, materials such as W, SiO₂, and WO₃can be used as the separation layer. In order to give stress, shock maybe applied with a diamond pen or the like.

The manufacturing method of the ID tag 2 is described above. As for theresonant circuit portions 4 and 39, the integrated circuit portionsthereof are formed by using thin films and isolated by the separationmethod.

Note that this embodiment can be combined freely with the otherembodiment modes and embodiments.

Embodiment 6

Embodiment 6 describes, with reference to FIGS. 13A to 13C, an examplein which the thin film integrated circuit portion 69 is directlytransferred and attached onto the inlet substrate 81 of the ID tag,without removing a jig 72 attached onto the thin film integrated circuitportion 69 after separating the thin film integrated circuit portion bya halogen fluoride gas in Embodiment 5.

First, as shown in Embodiment 5, a plurality of thin film integratedcircuit portions. 69 are formed and a jig 72 is attached by an adhesiveagent 73. As shown in FIG. 13A, a material having a protrusion 71 isemployed as the jig 72. As the adhesive agent 73, a material whoseadhesion is reduced or lost by UV-light irradiation is used here. Inaddition, a protective film 90 made of an organic material or aninorganic material is provided to prevent the thin film integratedcircuit portions 69 from being damaged. Etching is conducted by halogenfluoride such as ClF₃ to isolate elements.

Next, the jig 72 attached with the plurality of thin film integratedcircuit portions 69 are transferred and aligned with a stage 91 in whichthe inlet substrates 81 of ID tags are arranged. At this time, as shownin FIG. 13A, an alignment marker 93 provided for the jig 72 and thestage 91 can be used. An adhesive agent 92 has been formed in advance ina portion of the inlet substrate 81 for forming the thin film integratedcircuit portion 69, and by controlling the position of the jig 72, adesired element is attached to a desired portion of a product (FIG.13A). Simultaneously, the thin film integrated circuit portion 69 iselectrically connected to the antenna 82 formed on the inlet substrate81.

Next, the thin film integrated circuit portion 69 to be attached ontothe inlet substrate 81 is selectively irradiated with UV light 94 toreduce or cause a loss of adhesion of the adhesive agent 73, therebyseparating the jig 72 from the thin film integrated circuit portion(FIG. 13B). Thus, a desired thin film integrated circuit portion 69 canbe formed in a desired portion of the inlet substrate 81. Further, thethin film integrated circuit portion 69 is covered by coating 95 (FIG.13C). Note that here the antenna 82 is formed inside the inlet substrate81; however, an antenna may be formed in advance in the thin filmintegrated circuit portion 69.

According to the present invention shown in this embodiment, a desiredthin film integrated circuit portion 69 can be formed in a desiredportion, without separating elements discretely, in separating theelements by etching using halogen fluoride such as ClF₃. Note that thisembodiment can be freely combined with the other embodiment modes andembodiments.

As described above, the present invention is effective for packingproducts by a package body, storing, distributing and so on. Accordingto the present invention, the convenience of an ID tag can be improvedremarkably. In addition, in Embodiment modes and Embodiments describedabove, an object to be attached with an ID tag is a product; however, isnot limited to products, and the object to be attached with an ID tagmay also be an object to be managed, such as animals and plants.Therefore, the present invention can be applied widely, and availabilitythereof is so large.

EXPLANATION OF REFERENCE

1. product, 2. ID tag, 3. package body, 4. resonance circuit portion, 5.R/W, 6. antenna portion, 7. display portion, 8. operation key, 9.computer, 10. database, 11. controller, 12. output interface, 13. inputinterface, 14. output antenna, 15. input antenna, 16. integrated circuitportion, 17. electromagnetic wave, 18. antenna coil, 19. capacitor, 20.input antenna, 21. output antenna, 22. input interface, 23. outputinterface, 24. rectification circuit, 25. demodulation circuit, 26.modulation circuit, 27. amplifier, 28. bus, 29. thin film integratedcircuit portion, 30. CPU, 31. coprocessor, 32. ROM, 33. RAM, 34.nonvolatile memory, 35. suitcase, 36. price tag, 37. conveyer, 38.transportation vehicle, 39. resonance circuit portion, 40. substrate,41. separation layer, 42. protective film, 43. island-like semiconductorfilm, 44. gate insulating film, 45. resist, 46. gate electrode, 47.resist, 48. impurity element, 49. low concentration impurity region, 50.resist, 51. impurity element, 52. p-type high concentration impurityregion, 53. n-channel TFT, 54. p-channel TFT, 55. n-channel TFT, 56.p-channel TFT, 57. CPU, 58. memory, 59. insulating film, 60. sidewall,61. resist, 62. impurity element, 63. n-type high concentration impurityregion, 64. interlayer film, 65. protective film, 66. wiring, 67.connection wiring, 68. antenna connection portion, 69. thin filmintegrated circuit portion, 70. groove, 71. protrusion, 72. jig, 73.adhesive agent, 74. opening portion, 75. halogen fluoride gas, 76.substrate supplying means, 77. attaching means, 78. substrate isolatingmeans, 79. laminating device, 80. collecting means, 81. inlet substrate,82. antenna, 83. filling layer, 84. filler, 85. laminate resin layer,86. bell jar, 87. substrate, 88. heater, 89. exhaust pipe, 90.protective film, 91. stage, 92. adhesive agent, 93. marker, 94. UVlight, 95. coating, 201. antenna wiring, 202. antenna capacitor, 203.first capacitor means, 204. first diode, 205. second diode, 206. secondcapacitor means, 207. third diode, 208. third capacitor means, 209.switching element, 210. logic circuit, 211. amplifier, 212. clockgeneration circuit-decoder, 213. memory, 214. power supply circuit, 215.input-output circuit, 216. antenna circuit,

What is claimed is:
 1. A system comprising: a resonance circuit; andmeans for outputting a signal, wherein the resonance circuit comprisesan antenna coil and a first capacitor, wherein the resonance circuit isconfigured to receive a first signal from the means for outputting asignal, and configured to output a second signal in response to receiptof the first signal, wherein the resonance circuit is attached to apacking material, wherein a semiconductor device is configured toreceive the second signal from the resonance circuit, wherein arectification circuit included in the semiconductor device generates adirect-current source voltage based on the second signal, wherein thesemiconductor device is provided inside of a product, wherein theproduct is contained in the packing material, and wherein the means foroutputting a signal is disposed outside of the packing material.
 2. Thesystem according to claim 1, wherein a communication method between themeans for outputting a signal and the resonance circuit, and acommunication method between the resonance circuit and the semiconductordevice are identical to each other.
 3. The system according to claim 2,wherein the communication method is an electromagnetic induction method.4. The system according to claim 1, wherein a communication methodbetween the means for outputting a signal and the resonance circuit isdifferent from a communication method between the resonance circuit andthe semiconductor device.
 5. The system according to claim 1, wherein acommunication method between the means for outputting a signal and theresonance circuit is any one of an electromagnetic induction method anda microwave method.
 6. The system according to claim 1, wherein thesemiconductor device is selected from the group of an ID tag, an IDchip, an ID label, an ID seal and an ID sticker.
 7. The system accordingto claim 1, wherein the resonance circuit further comprises any one of abattery, a CPU and a memory.
 8. The system according to claim 1, whereinthe rectification circuit comprises a thin film active element.
 9. Thesystem according to claim 1, wherein the semiconductor device comprisesa demodulation circuit and a modulation circuit.
 10. A systemcomprising: a first resonance circuit; a second resonance circuit; andmeans for outputting a signal, wherein the first resonance circuitcomprises a first antenna coil and a first capacitor, wherein the firstresonance circuit is attached to a first packing material, wherein thesecond resonance circuit comprises a second antenna coil and a secondcapacitor, wherein the second resonance circuit is attached to a secondpacking material, wherein the second resonance circuit is configured toreceive a first signal from the means for outputting a signal, andconfigured to output a second signal in response to receipt of the firstsignal, wherein the first resonance circuit is configured to receive thesecond signal from the second resonance circuit, and configured tooutput a third signal in response to receipt of the second signal,wherein a semiconductor device is configured to receive the third signalfrom the first resonance circuit, wherein a rectification circuitincluded in the semiconductor device generates a direct-current sourcevoltage based on the third signal, for driving the semiconductor device,wherein the semiconductor device is contained in the first packingmaterial, wherein the first packing material is contained in the secondpacking material, and wherein the means for outputting a signal isdisposed outside of the second packing material.
 11. The systemaccording to claim 10, wherein a communication method between the meansfor outputting a signal and the first resonance circuit, a communicationmethod between the first resonance circuit and the second resonancecircuit, and a communication method between the second resonance circuitand the semiconductor device are identical to each other.
 12. The systemaccording to claim 11, wherein the communication method is anelectromagnetic induction method.
 13. The system according to claim 10,wherein a communication method between the means for outputting a signaland the second resonance circuit is different from a communicationmethod between the first resonance circuit and the semiconductor device.14. The system according to claim 10, wherein a communication methodbetween the means for outputting a signal and the second resonancecircuit is any one of an electromagnetic induction method and amicrowave method.
 15. The system according to claim 10, wherein thesemiconductor device is selected from the group of an ID tag, an IDchip, an ID label, an ID seal and an ID sticker.
 16. The systemaccording to claim 10, wherein at least one of the first resonancecircuit and the second resonance circuit further comprises any one of abattery, a CPU and a memory.
 17. The system according to claim 10,wherein the rectification circuit comprises a thin film active element.18. The system according to claim 10, wherein the semiconductor devicecomprises a demodulation circuit and a modulation circuit.
 19. A methodcomprising: sending a first signal from means for outputting a signal toa first resonance circuit, wherein the first resonance circuit comprisesa first antenna coil and a first capacitor; sending a second signal fromthe first resonance circuit to a second resonance circuit in response toreceipt of the first signal, wherein the second resonance circuitcomprises a second antenna coil and a second capacitor; sending a thirdsignal from the second resonance circuit to a semiconductor device inresponse to receipt of the second signal, wherein the semiconductordevice comprises a rectification circuit, and an antenna; and generatinga direct-current source voltage in the rectification circuit based onthe third signal, for driving the semiconductor device, wherein thefirst resonance circuit is attached to a first packing material, whereinthe second resonance circuit is attached to a second packing material,wherein the second packing material is contained in the first packingmaterial, wherein the semiconductor device is contained in the secondpacking material, and wherein the means for outputting a signal isdisposed outside of the first packing material.
 20. The method accordingto claim 19, wherein the semiconductor device is selected from the groupof an ID tag, an ID chip, an ID label, an ID seal and an ID sticker. 21.The method according to claim 19, wherein at least one of the firstresonance circuit and the second resonance circuit further comprises anyone of a battery, a CPU and a memory.
 22. The method according to claim19, wherein the rectification circuit comprises a thin film activeelement.
 23. The method according to claim 19, wherein the semiconductordevice comprises a demodulation circuit and a modulation circuit.